Topics covered in the book include the stateoftheart of power mosfet drive techniques, the switching loss model, current source gate drivers csds, resonant gate drivers, adaptive gate drivers and gan hemt gate drivers. The gate driver loops should be minimized and matched, the driver and gan device should be on the same side of the pcb and groundpower planes used. Wolfspeeds 3rd generation 650v mosfet technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, ups, solar pv inverters and consumer electronics. The gs66508b is an enhancement mode ganonsilicon power transistor. With the advent of widebandgap semiconductor materials such as gallium nitride gan and silicon carbide sic, cmti is becoming the most critical parameter for isolated gate drivers. Isolated gate drivers for gan mosfets july 9, 2019 christa paul an isolation device is an integrated circuit that allows the transfer of data and energy between high and lowvoltage units, preventing the presence of dangerous or uncontrolled transient current coming from the network. Pchannel mosfets, the best choice for highside switching. Investigation of gate drive strategies for high voltage gan. Construction of an isolated gate driver multichip module 16 14 1 uvlo driver 15 functional. Mosfet vs igbt isolated gate driver and applications wide band gap semiconductors. Safe switching of highspeed siliconcarbide sic and galliumnitride gan transistors places an extra requirement on isolated gate driver ics.
Unlike in mos transistors however, a small around 10ma current is injected from the gate into the conducting layers by electrons tunneling through the algan barrier. The device features an internal ldo which ensures a gatedrive. A gate driver is a power amplifier that accepts a lowpower input from a controller ic and produces a highcurrent drive input for the gate of a highpower transistor such as an igbt or power mosfet. We offer excellent product families of galvanic isolated gate drivers. In essence, a gate driver consists of a level shifter in combination with an amplifier. I acknowledge that i may, and am willing to, receive future communications from cree, inc. Gate driver circuit optimization for sic power devices. Selecting gate driver ics for gallium nitride fets digikey. Key features include wide input range of operation, extended temperature range of operation, a powerful gate drive, and shortcircuit protection. Gan systems 11 gate drive impedance rg and lg is critical for turnoff, but less at turnon. The up1966a from upi semiconductor is designed to drive both highside and lowside gan fets in halfbridge topologies. In this study, we investigate the influences of parasitic inductances of the gan hemts on the output voltage of. As a result, 20mhz hard switching of a sic mosfet was achieved using the improved gate driver with gan hemts.
The up1966a has split gate outputs that can operate to several mhz on both high and low side drive channels, providing the ability to adjust both turnon and turnoff transition times independently. In onstate, the gate behaves essentially like a diode. Added features like gate voltage regulation, programmable dead time, and low internal power consumption ensure. Layout considerations gate drive loop inductance the maximum allowable gate voltage of 6 v is one and a half volts above the recommended 4. Gallium nitride coolgan emode hemts are best driven by infineons gan eicedriver ics, the 1edf5673k, 1edf5673f and 1eds5663h gate driver ics. The properties of gan allow for high current, high voltage breakdown and high switching frequency. A highspeed gate driver based on ganhemts pushpull configuration has been proposed to drive a sic power mosfet at high switching frequency. Texas instruments lmg1210 is a 200 v, halfbridge mosfet and gallium nitride fieldeffect transistor gan fet driver designed for ultrahigh frequency, highefficiency applications that feature adjustable deadtime capability, ultrasmall propagation delay, and 3. The gan hemt switches would be used as a component for controlling variable speed electric motors in. The outputs of the pe29102 are capable of providing switching transition speeds in the subnanosecond range for switching applications up to 40 mhz.
Highspeed gate drive circuit for sic mosfet by gan hemt kohei nagaoka1, kentaro chikamatsu2, atsushi yamaguchi2, ken nakahara2, and takashi hikihara1a 1 department of electrical engineering. High side gate drivers, gan eicedriver with most robust and efficient singlechannel isolated gallium nitride gan eicedriver ics are the perfect choice. Gan switches need a careful design of their gate drive circuit to achieve the promised gains in efficiency and power density with operational reliability. Gan systems has a solution to easily use the mosfet controller 12 v output voltage to drive the gan 7 v gate input without the need of an external or integrated additional driver. The combination of panasonics xgan and broadcoms latest 5a optocoupler will enable power supply engineers to deliver highperformance, costeffective gate driver solutions, further establishing the gan git as a technology of choice for high power, high speed switching applications, said mr.
We think sic is the way of the future, but you dont have to take our word for it. Gate drivers with low impedance and high peak current are recommended for fast switching speed. This paper focuses on a development and an evaluation of highspeed gate drive circuit for sic power mosfet by gan hemt. Enhancement of driving capability of gate driver using gan. Maxim max22700max22702 isolated gate drivers, available now from mouser, are a family of singlechannel isolated gate drivers with ultrahigh cmti of 300kv. To fully protect the gate of the gan power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately. This limited headroom requires an accurate gate drive supply, as well as a limited inductance between the egan fet and gate driver as the inductance can cause a voltage overshoot on the gate. Similar gate drive requirement to silicon mosfetigbt.
The lmg1210 is a 200v, halfbridge mosfet and gallium nitride field effect transistor gan fet driver designed for ultrahigh frequency, highefficiency applications that features adjustable deadtime capability, very small propagation delay, and 3. High side gate drivers gan eicedriver infineon technologies. The increasing requests to sic power devices face to the difficulty of the. Learn about the technology that aims to make cars safer one pulse at a time.
High performance, 650 v half bridge gate driver for. Yutaka tanase, cto, panasonic semiconductor solutions. Single 1 driver gate drivers, mosfet gate drivers gate drivers, 1 output dip8 through hole gate drivers, 1 output 2. Takafumi okuda and takashi hikihara in this paper, we. Wbg devices, many power supply designers have begun to investigate the merits of fets based on gallium nitrideonsilicon ganonsi for a variety of new designs and emerging applications. How sic mosfet gate drivers make for smaller inverters and ev chargers. Gate drivers can be provided either onchip or as a discrete module. This paper describes an innovative circuit that permits the safe and reliable use of. Gate drivers serve as a critical role between control and power devices. With a range spanning from single to halfbridge and multiplechannel drivers rated for either low or highvoltage up to 1500 v applications, st also offers galvanicallyisolated gate driver ics for safety and functional requirements, systeminpackage sip solutions integrating high and lowside gate drivers and mosfetbased power stages. Highspeed gate drive circuit for sic mosfet by gan hemt.
Texas instruments ucc2753x ic family of singlechannel, highspeed gate drivers capable of driving sic mosfet power switches by up to 2. These advantageous characteristics have spurred the presence of an ever increasing ecosystem of power electronics components such as gate drivers, controllers, and passive components that specifically enhance egan fet performance. Isolated gate drivers isodriver products silicon labs. Drain, gate and source are similar to a silicon mosfets d, g, and s and k is the kelvin contact for the gate return. The up1966a from upi semiconductor is designed to drive both highside and lowside gan fets in half bridge topologies. The ncp51820 highspeed gate driver is designed to meet the stringent requirements of driving enhancement mode e. Sic mosfet characteristics transconductance a silicon mosfet used in a switching power supply switches as quickly as possible between one of two operating modes or regions. Selecting gate driver ics for gallium nitride fets. Gn001 application brief how to drive gan enhancement. Isolated gate drivers are designed for the highest switching speeds and system size constraints required by technologies such as sic silicon carbide and gan gallium nitride, by providing reliable control over igbt and mosfet. Gan fet drivers overview gan gate drivers power ics.
You can use isl55110 driver with gs66502b gan mosfet. Highspeed gan gate drivers enabling high power density and design simplicity for every power topology. Infineon technologies will develop a new, lowcost integrated circuit ic gate driver specifically for use with gallium nitride gan high electron mobility transistor hemt switches. Isolated gate drivers enable lowvoltage microcontrollers to safely switch highvoltage power transistors on and off. Currently, the maximum gate drive voltage for ganpowers emode hemt. The pe29102 is an integrated highspeed driver designed to control the gates of external power devices, such as gallium nitride gan fets. An isolation device is an integrated circuit that allows the transfer of data and energy. Gate driver ics suitable for sic mosfets are available from. How sic mosfet gate drivers make for smaller inverters and. High side drivers could be automotive gate drivers, gan eicedriver gate driver ics, galvanic isolated gate driver, 500700v levelshift gate driver, eicedriver 1ed compact and hvic gate driver ics. Gn001 application brief how to drive gan enhancement mode hemt. A high cmti value means that the isolated gate driver can be used in applications with high switching frequency.
Using mosfet controllers to drive gan ehemts technical. High side gate drivers, gan eicedriver with most robust and efficient singlechannel isolated gallium nitride gan eicedriver ics are the perfect choice to drive gallium nitride gan devices in high frequency and high power applications such as server and telecom. Gan fet gate drivers highspeed gan gate drivers enabling high power density and design simplicity for every power topology our drivers combination of fast timing specs, leadless packages, and narrow pulsewidth response enable you to switch fets fast. Our drivers combination of fast timing specs, leadless packages, and narrow pulsewidth response enable you to switch fets fast. Our isodriver product family offers ultrafast propagation delays for better timing margins, rocksolid operation over temperature and time, and unparalleled size and cost benefits. Isolated gate drivers for driving sic or gan transistors.
Highvoltage, isolated gate driver with internal miller clamp 2a output, 11. It integrates an internal bootstrap supply and uvlo. Analog devices growing portfolio of highside switches and mosfet fet drivers provides a simple and effective solution to drive single, dual, triple, or quad nchannel or pchannel fets. This work will discuss the impact of the different gate drive strategies on the gan switching performance. Pchannel mosfets, the best choice for highside switching historically, pchannel fets were not considered as useful as. All have a place philip zuk, director of market development, highvoltage mosfet group, vishay siliconix june 20, 2012 questions have arisen about how silicon will compete against wide bandgap wbg materials such as. Isolated gate drivers for gan mosfets power electronics. They are perfect for applications like aircon, automotive, solar. The devices are intended to drive sic or gan transistors in multiple inverter or motor control applications. Staying in tune with their customers, a number of suppliers have emerged to cater to such needs. Lmg1210 halfbridge mosfetgan fet driver ti digikey. A standard mosfet driver can be used as long as it supports 6 v for gate drive and the uvlo is suitable for 6v operation. Using isolated gate drivers for mosfet, igbt and sic applications nagarajan sridhar. Decades of application expertise and technology development at both infineon and international rectifier have produced a portfolio of gate driver ics for use with silicon and widebandgap power devices, such as mosfets, discrete igbts, igbt modules, sic mosfets and gan hemts.
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